The influence of the tantalum buffer layer on the magnetic anisotropy ofperpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied usingmagneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are foundto exhibit no perpendicular magnetization. The transport of Boron into thetantalum buffer is considered to play an important role on the switchingcurrents of those devices. With the optimized layer stack of a perpendiculartunnel junction, a minimal critical switching current density of only 9.2kA/cm$^2$ is observed. As of today, this value is the lowest reported value forcurrent-induced magnetization reversal.
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机译：利用磁光克尔光谱研究了钽缓冲层对垂直的Co-Fe-B / MgO基磁性隧道结的磁各向异性的影响。发现没有钽缓冲液的样品没有表现出垂直磁化强度。硼向金属钽缓冲液中的迁移被认为对这些器件的开关电流起着重要作用。使用垂直隧道结的优化叠层，观察到的最小临界开关电流密度仅为9.2kA / cm $ ^ 2 $。到今天为止，该值是电流感应磁化反转的最低报告值。
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